Electronic Physics & Microelectronics.

Microelectronics and nanoelectronic devices.

Structural and Electrical Characterization of Materials

• Reliability study of MOS devices subjected to electrical stress.
• Study of semiconductor memory devices using nanocrystals.
• Study of semiconductors and Si and III-V devices.
• Fabrication and study of electroluminescent displays and electroluminescent devices.
• Electrical characterization of carbon membranes for microelectronics applications.
• Development, structural, and electrical characterization of MOS devices containing high-k gate dielectric materials and next-generation DRAM memories.
• Study of MOS devices based on Germanium (Ge) where a rare earth oxide is used as a first isolation layer dielectric for use in upcoming generations of CMOS devices.